AMD.POWER
مدیر بازنشسته
شايد كمتر كسي باشد كه اسم كينگستون رو نشينده باشد . خيلي از مردم اين شركت رو بيشتر با VALUE RAM ها ميشناسند . ولي اين شركت رمهاي هاي اند بسيار خوبي توليد ميكند به نام HYPER X كه يكي از بهترين رمها ميباشد . به تازگي پك 16 گيگابايتي اين محصول رو آماده فروش دارد :
اين رمها طوري طراحي و ساخته شدند كه بيشترين سازگاري با پلتفرم جديد اينتل X79 دارند
مشخصات
CL(IDD): 9 cycles
Row Cycle Time (tRCmin): 49.5ns (min.)
Refresh to Active/Refresh: 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin): 36ns (min.)
Power (Operating): 1.410 W* (per module)
UL Rating: 94 V - 0
Operating Temperature: 0o C to 85o C
Storage Temperature: -55o C to +100o C
Features
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency (CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm) w/ heat spreader, double sided component
اين رمها طوري طراحي و ساخته شدند كه بيشترين سازگاري با پلتفرم جديد اينتل X79 دارند
مشخصات
CL(IDD): 9 cycles
Row Cycle Time (tRCmin): 49.5ns (min.)
Refresh to Active/Refresh: 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin): 36ns (min.)
Power (Operating): 1.410 W* (per module)
UL Rating: 94 V - 0
Operating Temperature: 0o C to 85o C
Storage Temperature: -55o C to +100o C
Features
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency (CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self-calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm) w/ heat spreader, double sided component
